Up to fifth-order Raman scattering of InP under nonresonant conditions
Author(s) -
L. Artús,
R. Cuscó,
J.M. Encinar,
G. González-Dı́az
Publication year - 1994
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.50.11552
Subject(s) - raman scattering , order (exchange) , scattering , materials science , x ray raman scattering , raman spectroscopy , atomic physics , physics , optics , finance , economics
We present Raman spectra of InP measured under nonresonant conditions revealing multiphonon processes up to fifth order. Using an incident photon energy in the absorption region of the compound but far from any of its interband transitions, nonresonant multiphonon processes of order higher than two, which have not been reported so far in a zinc-blende-type semiconductor, have been observed in indium phosphide. In this way it has been possible to detect contributions not only from the longitudinal optical phonons but also from the transverse optical phonons in the higher-order peaks. We find a very good agreement between multiples of the TO- and LO-phonon frequencies at the zone center and the higher-order phonons measured in the experiments. The trend of strong intensity reductions observed when passing from first to second as well as from second to third order is not maintained when going from third to fourth, and from fourth to fifth order
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom