Three signatures of phase-coherent Andreev reflection
Author(s) -
I. K. Marmorkos,
C. W. J. Beenakker,
Rodolfo A. Jalabert
Publication year - 1993
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.48.2811
Subject(s) - andreev reflection , physics , conductance , condensed matter physics , superconductivity , quantum tunnelling , phase (matter) , weak localization , resistive touchscreen , t symmetry , magnetic field , quantum mechanics , magnetoresistance , engineering , electrical engineering
An efficient numerical scheme is developed to compute the differential conductance [ital G][sub NS] of a disordered normal-metal--superconductor (NS) junction at voltages [ital V] and magnetic fields [ital B]. A sharp [ital peak] is found in [ital G][sub NS] around [ital V],[ital B]=0 in the case of a resistive NS interface, as observed experimentally and confirming the theory of reflectionless tunneling.'' An ideal interface shows a conductance [ital dip], due to an enhanced weak-localization effect. Finally, it is demonstrared that time-reversal-symmetry breaking does [ital not] reduce the universal conductance fluctuations'' in [ital G][sub NS] by a factor of 2.
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