Theory of single-electron charging of quantum wells and dots
Author(s) -
D. V. Averin,
Alexander N. Korotkov,
K. K. Likharev
Publication year - 1991
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.44.6199
Subject(s) - quantum dot , electron , quantum well , quantization (signal processing) , heterojunction , condensed matter physics , quantum point contact , physics , semiconductor , coulomb blockade , quantum tunnelling , materials science , voltage , quantum mechanics , transistor , laser , computer science , computer vision
Single-electron charging effects similar to those in small-area metallic tunnel junctions should take place in semiconductor heterostructures, in particular, small-area quantum wells. Our analysis shows that dc current-voltage characteristics of such a well should exhibit an interplay between single-electron charging and energy-quantization effects. Relative magnitude of the single-electron charging effects is determined by the same parameter which scales multielectron charging in the conventional (large-area) quantum wells.
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