Open AccessPressure-induced resonance broadening of exciton line shapes in semiconductors: Direct determination of intervalley scattering rates in GaAs
Author(s) -
S. Satpathy,
M. Chandrasekhar,
H. R. Chandrasekhar,
U. D. Venkateswaran
Publication year - 1991
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.44.11339
Subject(s) - exciton , resonance (particle physics) , physics , semiconductor , photoluminescence , phonon , coupling (piping) , condensed matter physics , line (geometry) , electron , scattering , observable , atomic physics , materials science , optics , quantum mechanics , geometry , mathematics , metallurgy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom