Two reaction channels directly observed for atomic hydrogen on the Si(111)-7×7 surface | Zendy

Kell Mortensen | Zendy; D. M. Chen | Zendy; P. Bedrossian | Zendy; J. A. Golovchenko | Zendy; Flemming Besenbacher | Zendy

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Two reaction channels directly observed for atomic hydrogen on the Si(111)-7×7 surface

Author(s) -

Kell Mortensen,

D. M. Chen,

P. Bedrossian,

J. A. Golovchenko,

Flemming Besenbacher

Publication year - 1991

Publication title -

physical review. b, condensed matter

Language(s) - French

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.43.1816

Subject(s) - dangling bond , scanning tunneling microscope , hydrogen , materials science , surface (topology) , spectroscopy , atomic physics , layer (electronics) , quantum tunnelling , scanning tunneling spectroscopy , chemical physics , hydrogen bond , surface reconstruction , molecular physics , silicon , crystallography , nanotechnology , molecule , chemistry , physics , optoelectronics , quantum mechanics , geometry , mathematics

Ces deux canaux de reaction procedent de facon concurrentielle. Il y a une liaison directe des atomes d'hydrogene aux liaisons pendantes existantes de la surface, et un deplacement plus lent de la couche superieure de Si et une liaison des atomes d'hydrogene aux liaisons pendantes creees de la couche suivante

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