Low-temperature epitaxial growth of thin metal films | Zendy

J. W. Evans | Zendy; D. B. Sanders | Zendy; P. A. Thiel | Zendy; Andrew E. DePristo | Zendy

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Low-temperature epitaxial growth of thin metal films

Author(s) -

J. W. Evans,

D. B. Sanders,

P. A. Thiel,

Andrew E. DePristo

Publication year - 1990

Publication title -

physical review. b, condensed matter

Language(s) - English

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.41.5410

Subject(s) - nucleation , epitaxy , materials science , chemical physics , diffraction , metal , deposition (geology) , adsorption , condensed matter physics , thin film , island growth , crystal growth , growth model , nanotechnology , crystallography , optics , thermodynamics , chemistry , layer (electronics) , metallurgy , physics , paleontology , sediment , biology , economics , microeconomics

We present a different mechanism to explain the occurrence of long-lived oscillations in diffraction spot intensities during epitaxial growth of metal films on fcc (100) substrates at low temperature. Rather than rely on the common picture of cyclical nucleation and growth to produce the oscillations, the model invokes ``downward funneling'' deposition dynamics to fourfold-hollow adsorption sites.

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