Motional effects between on-center and off-center substitutional nitrogen in silicon | Zendy

Kouichi Murakami | Zendy; Hitoshi Kuribayashi | Zendy; Kohzoh Masuda | Zendy

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Motional effects between on-center and off-center substitutional nitrogen in silicon

Author(s) -

Kouichi Murakami,

Hitoshi Kuribayashi,

Kohzoh Masuda

Publication year - 1988

Publication title -

physical review. b, condensed matter

Language(s) - English

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.38.1589

Subject(s) - hyperfine structure , center (category theory) , atomic physics , silicon , unpaired electron , adiabatic process , nitrogen , electron paramagnetic resonance , nitrogen vacancy center , physics , electron , materials science , nuclear magnetic resonance , chemistry , crystallography , nuclear physics , quantum mechanics , optoelectronics

We have found for the first time that the hyperfine splitting of the ESR of off-center substitutional nitrogen in silicon increases with increasing the temperature above ≅ 150 K. A model is proposed in which a hypothetical on-center substitutional N site exists in an adiabatic potential-energy minimum higher than that of the off-center substitutional N. Motional averaging and narrowing among these configurations of the N center occur between ESR hyperfine lines and account for the increase in the hyperfine splitting. The fractional s character and localization of the unpaired electron at the on-center N seem to be significantly increased compared to those at the off-center N

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