Hydrogenation of semiconductor surfaces: Si and Ge (111)
Author(s) -
Efthimios Kaxiras,
J. D. Joannopoulos
Publication year - 1988
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.37.8842
Subject(s) - materials science , dipole , molecular vibration , semiconductor , atom (system on chip) , ab initio , substrate (aquarium) , atomic physics , molecular physics , hydrogen , germanium , charge (physics) , amorphous solid , silicon , crystallography , optics , physics , chemistry , optoelectronics , raman spectroscopy , oceanography , quantum mechanics , computer science , embedded system , geology
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