Surface barrier for electrons in metals
Author(s) -
Philip Jennings,
R. Jones,
M. Weinert
Publication year - 1988
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.37.6113
Subject(s) - chemisorption , electron , plane wave , surface (topology) , materials science , condensed matter physics , work (physics) , plane (geometry) , electron diffraction , diffraction , density functional theory , atomic physics , molecular physics , physics , chemistry , quantum mechanics , adsorption , geometry , mathematics
Density-functional calculations using the full-potential linearized augmented-plane-wave (FLAPW) film method have been used to compute the effective potential for electrons at different surfaces of Al, Ni, Cu, Ag, and W. In each case, the average of the potential parallel to the surface is reproduced well by a simple model barrier with three adjustable parameters, with relatively small variations between different metals and surfaces. FLAPW calculations have also been used to examine the effects of chemisorption on the surface barrier. The results of this work provide a basis for the analysis of low-energy-electron-diffraction fine-structure and inverse-photoemission spectra.
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