Localized indirect excitons in a short-period GaAs/AlAs superlattice | Zendy

F. Minami | Zendy; K. Hirata | Zendy; Koh Era | Zendy; T. Yao | Zendy; Yasuaki Masumoto | Zendy

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Localized indirect excitons in a short-period GaAs/AlAs superlattice

Author(s) -

F. Minami,

K. Hirata,

Koh Era,

T. Yao,

Yasuaki Masumoto

Publication year - 1987

Publication title -

physical review. b, condensed matter

Language(s) - English

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.36.2875

Subject(s) - superlattice , exciton , condensed matter physics , quantum tunnelling , period (music) , phonon , materials science , physics , acoustics

We have studied the optical properties of a short-period superlattice composed of 20.4-Å GaAs and 14.7-Å AlAs layers. The superlattice behaves as an indirect-gap material. A slow and nonexponential decay of the luminescence can be interpreted as the emission from the Λ indirect excitons localized at the GaAs/AlAs interfaces. The temperature dependence of the exciton decay time can be explained in terms of a transition by phonon-assisted tunneling, followed by a nonradiative transition

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