Ab initiotheory of polar semiconductor surfaces. I. Methodology and the (22) reconstructions of GaAs(111)
Author(s) -
Efthimios Kaxiras,
Yaneer Bar-Yam,
J. D. Joannopoulos,
K. C. Pandey
Publication year - 1987
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.35.9625
Subject(s) - pseudopotential , ab initio , polar , context (archaeology) , semiconductor , density functional theory , compound semiconductor , materials science , stoichiometry , ab initio quantum chemistry methods , energy (signal processing) , total energy , atomic physics , computational chemistry , condensed matter physics , molecular physics , physics , chemistry , nanotechnology , quantum mechanics , molecule , epitaxy , optoelectronics , psychology , paleontology , layer (electronics) , displacement (psychology) , psychotherapist , biology
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