z-logo
open-access-imgOpen Access
Ab initiotheory of polar semiconductor surfaces. I. Methodology and the (22) reconstructions of GaAs(111)
Author(s) -
Efthimios Kaxiras,
Yaneer Bar-Yam,
J. D. Joannopoulos,
K. C. Pandey
Publication year - 1987
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.35.9625
Subject(s) - pseudopotential , ab initio , polar , context (archaeology) , semiconductor , density functional theory , compound semiconductor , materials science , stoichiometry , ab initio quantum chemistry methods , energy (signal processing) , total energy , atomic physics , computational chemistry , condensed matter physics , molecular physics , physics , chemistry , nanotechnology , quantum mechanics , molecule , epitaxy , optoelectronics , psychology , paleontology , layer (electronics) , displacement (psychology) , psychotherapist , biology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom