Electroreflectance of GaSb from 0.6 to 26 eV | Zendy

D. E. Aspnes | Zendy; C. G. Olson | Zendy; D. W. Lynch | Zendy

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Electroreflectance of GaSb from 0.6 to 26 eV

Author(s) -

D. E. Aspnes,

C. G. Olson,

D. W. Lynch

Publication year - 1976

Publication title -

physical review. b, solid state

Language(s) - English

Resource type - Journals

ISSN - 0556-2805

DOI - 10.1103/physrevb.14.4450

Subject(s) - pseudopotential , exciton , spectral line , valence (chemistry) , atomic physics , conduction band , binding energy , schottky barrier , physics , energy (signal processing) , materials science , condensed matter physics , electron , quantum mechanics , diode

Schottky barrier electroreflectance spectra are reported for GaSb from 0.6 to 26 eV. Accurate energies are determined for a number of critical points between the sp3 and Ga−3d valence bands and the conduction bands. The energy of XV7 is shown to lie at least 3 eV below ΓV8. This is below the value obtained from local pseudopotential calculations and the x-ray photoemission assignments, but follows a trend previously established by nonlocal pseudopotential calculations for Ge and GaAs. The Ga 3d-XC6 exciton binding energy is of the order of 100 meV.

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