Electrically Induced Multiple Metal-Insulator Transitions in Oxide Nanodevices | Zendy

Javier del Valle | Zendy; Yoav Kalcheim | Zendy; Juan Trastoy | Zendy; Aliaksei Charnukha | Zendy; Dimitri Basov | Zendy; Iván K. Schuller | Zendy

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Electrically Induced Multiple Metal-Insulator Transitions in Oxide Nanodevices

Author(s) -

Javier del Valle,

Yoav Kalcheim,

Juan Trastoy,

Aliaksei Charnukha,

Dimitri Basov,

Iván K. Schuller

Publication year - 2017

Publication title -

physical review applied

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.883

H-Index - 75

eISSN - 2331-7043

pISSN - 2331-7019

DOI - 10.1103/physrevapplied.8.054041

Subject(s) - neuromorphic engineering , materials science , nanotechnology , non volatile memory , resistive random access memory , resistive touchscreen , hysteresis , oxide , metal–insulator transition , mott insulator , insulator (electricity) , optoelectronics , voltage , computer science , engineering physics , metal , condensed matter physics , electrical engineering , physics , artificial neural network , engineering , machine learning , metallurgy , computer vision

Javier del Valle, Yoav Kalcheim, Juan Trastoy, Aliaksei Charnukha, Dimitri N. Basov, and Ivan K. Schuller Department of Physics, University of California San Diego, La Jolla, California 92093, USA Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, USA Department of Physics, Columbia University, New York, New York 10027, USA (Received 15 June 2017; revised manuscript received 28 September 2017; published 21 November 2017)

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