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Effect of Electrode Roughness on Electroforming inHfO2and Defect-Induced Moderation of Electric-Field Enhancement
Author(s) -
Sanjoy Kumar Nandi,
Xinjun Liu,
V. Dinesh,
R. G. Elliman
Publication year - 2015
Publication title -
physical review applied
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.883
H-Index - 75
eISSN - 2331-7043
pISSN - 2331-7019
DOI - 10.1103/physrevapplied.4.064010
Subject(s) - electrode , materials science , electroforming , resistive random access memory , dielectric , electric field , surface finish , breakdown voltage , electrical engineering , voltage , optoelectronics , physics , composite material , engineering , layer (electronics) , quantum mechanics

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