Charge states of fast ions in glancing collisions with aligned atoms in Si crystals
Author(s) -
Hiroshi Kudo,
Taro Fukusho,
Toyoyuki Ishihara,
Hidefumi Takeshita,
Aoki Yasushi,
Shunya Yamamoto,
H. Naramoto
Publication year - 1994
Publication title -
physical review a
Language(s) - English
Resource type - Journals
eISSN - 1094-1622
pISSN - 1050-2947
DOI - 10.1103/physreva.50.4049
Subject(s) - physics , ion , electron , atomic physics , electron capture , charge (physics) , effective nuclear charge , nuclear physics , quantum mechanics
We have measured keV secondary electrons induced by 2.5- and 3.5-MeV/u ions under Si〈100〉 and Si〈110〉 channeling-incidence conditions. From a comparison of the electron yields for the ions of equal velocity, the effective nuclear charges of the ions in glancing collisions with aligned Si atoms have been determined. The results indicate that He2+, B5+, C4+, C6+, O5+, and C8+ do not capture target electrons, while Si, S, and Cl ions capture or lose electrons depending on the incident charge state. For the heavy ions, the number of bound electrons in the charge equilibrium is greater than for the random case, for example, by 2–4 and 3–5 for 2.5-MeV/u Si and S, respectively
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