Silicon-based silicon–germanium–tin heterostructure photonics | Zendy

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Silicon-based silicon–germanium–tin heterostructure photonics

Author(s) -

Richard Soref

Publication year - 2014

Publication title -

philosophical transactions of the royal society a mathematical physical and engineering sciences

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.074

H-Index - 169

eISSN - 1471-2962

pISSN - 1364-503X

DOI - 10.1098/rsta.2013.0113

Subject(s) - optoelectronics , materials science , silicon photonics , photonics , heterojunction , diode , silicon , photodetector , photonic integrated circuit , laser , electronic circuit , infrared , optics , electrical engineering , engineering , physics

The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.

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