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Tuning electrical properties of graphite oxide by plasma
Author(s) -
Hongfei Zhu,
Deyang Ji,
Lang Jiang,
Huanli Dong,
Wenping Hu
Publication year - 2013
Publication title -
philosophical transactions of the royal society a mathematical physical and engineering sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.074
H-Index - 169
eISSN - 1471-2962
pISSN - 1364-503X
DOI - 10.1098/rsta.2012.0308
Subject(s) - ambipolar diffusion , graphite , graphene , materials science , plasma , oxide , hydrogen , graphite oxide , electrical resistivity and conductivity , argon , conductivity , ammonia , analytical chemistry (journal) , chemical engineering , nanotechnology , chemistry , composite material , electrical engineering , physics , organic chemistry , metallurgy , engineering , quantum mechanics
The electrical properties of graphite oxide (GO) can be tuned consecutively by treating samples with ammonia and hydrogen plasma. When altering ammonia plasma time from 10 to 4.5 min, large area (greater than 100×100 μm²), n-type, ambipolar and p-type semiconducting reduced graphite oxide (RGO) sheets could be obtained. The highest mobilities of the electron and hole are 5.41 and 2.10 cm² V⁻¹ s⁻¹ at low operational voltage (3 or -3 V, respectively). When treating a GO film with hydrogen:argon (9:1) plasma, high conductivity RGO was obtained with conductivity around 630 S cm⁻¹. It is anticipated that this study could pave the way towards carbon-based electronics.

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