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Giant flexoelectric effect through interfacial strain relaxation
Author(s) -
D. Lee,
Tae Won Noh
Publication year - 2012
Publication title -
philosophical transactions of the royal society a mathematical physical and engineering sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.074
H-Index - 169
eISSN - 1471-2962
pISSN - 1364-503X
DOI - 10.1098/rsta.2012.0200
Subject(s) - flexoelectricity , materials science , ferroelectricity , condensed matter physics , thin film , epitaxy , oxide , relaxation (psychology) , electric field , nanotechnology , composite material , optoelectronics , piezoelectricity , dielectric , physics , psychology , social psychology , layer (electronics) , quantum mechanics , metallurgy
Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MV m(-1) by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.

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