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Binary recombination of para- and ortho-H 3 + with electrons at low temperatures
Author(s) -
Petr Dohnal,
Michal Hejduk,
J. Varju,
Peter Rubovič,
Štěpán Roučka,
T. Kotrík,
R. Plašil,
Rainer Johnsen,
J. Glosı́k
Publication year - 2012
Publication title -
philosophical transactions of the royal society a mathematical physical and engineering sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.074
H-Index - 169
eISSN - 1471-2962
pISSN - 1364-503X
DOI - 10.1098/rsta.2012.0097
Subject(s) - recombination , ion , afterglow , atomic physics , electron , dissociative recombination , spectroscopy , binary number , range (aeronautics) , physics , materials science , chemistry , nuclear physics , astrophysics , biochemistry , arithmetic , mathematics , gamma ray burst , quantum mechanics , composite material , gene
Results of an experimental study of binary recombination of para- and ortho-H(3)(+) ions with electrons are presented. Near-infrared cavity-ring-down absorption spectroscopy was used to probe the lowest rotational states of H(3)(+) ions in the temperature range of 77-200 K in an H(3)(+)-dominated afterglow plasma. By changing the para/ortho abundance ratio, we were able to obtain the binary recombination rate coefficients for pure and para-H(3)(+) and ortho-H(3)(+). The results are in good agreement with previous theoretical predictions.

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