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Single electron spintronics
Author(s) -
K. J. Dempsey,
David Ciudad,
C. H. Marrows
Publication year - 2011
Publication title -
philosophical transactions of the royal society a mathematical physical and engineering sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.074
H-Index - 169
eISSN - 1471-2962
pISSN - 1364-503X
DOI - 10.1098/rsta.2011.0105
Subject(s) - spintronics , quantum tunnelling , condensed matter physics , ferromagnetism , electron , spin (aerodynamics) , spin engineering , qubit , magnetoresistance , spinplasmonics , spin polarization , quantum dot , physics , quantum , magnetic field , spin hall effect , quantum mechanics , thermodynamics
Single electron electronics is now well developed, and allows the manipulation of electrons one-by-one as they tunnel on and off a nanoscale conducting island. In the past decade or so, there have been concerted efforts in several laboratories to construct single electron devices incorporating ferromagnetic components in order to introduce spin functionality. The use of ferromagnetic electrodes with a non-magnetic island can lead to spin accumulation on the island. On the other hand, making the dot also ferromagnetic introduces new physics such as tunnelling magnetoresistance enhancement in the cotunnelling regime and manifestations of the Kondo effect. Such nanoscale islands are also found to have long spin lifetimes. Conventional spintronics makes use of the average spin-polarization of a large ensemble of electrons: this new approach offers the prospect of accessing the quantum properties of the electron, and is a candidate approach to the construction of solid-state spin-based qubits.

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