Negative-tone molecular glass photoresist for high-resolution electron beam lithography | Zendy

Yafei Wang | Zendy; Long Chen | Zendy; YU Jia-Ting | Zendy; Xudong Guo | Zendy; Shuangqing Wang | Zendy; Guoqiang Yang | Zendy

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Negative-tone molecular glass photoresist for high-resolution electron beam lithography

Author(s) -

Yafei Wang,

Long Chen,

YU Jia-Ting,

Xudong Guo,

Shuangqing Wang,

Guoqiang Yang

Publication year - 2021

Publication title -

royal society open science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.84

H-Index - 51

ISSN - 2054-5703

DOI - 10.1098/rsos.202132

Subject(s) - photoresist , electron beam lithography , materials science , resist , lithography , x ray lithography , tone (literature) , cathode ray , optoelectronics , optics , next generation lithography , thermal stability , photolithography , electron , nanotechnology , chemistry , physics , art , literature , organic chemistry , layer (electronics) , quantum mechanics

A low molecular weight organic compound containing bis-phenol A backbone (BPA-6OH) is reported as a negative-tone photoresist. This material has a high glass transition temperature and excellent thermal stability. A good contrast, well-resolved line pattern around 73.4 nm and sensitivity of 52 µC cm −2 can be received for negative-tone molecular glass photoresist upon exposure in electron beam lithography system. It indicates that the negative-tone molecular glass photoresist is one of the promising candidates for use in electron beam lithography.

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