Effects of annealing atmosphere on the performance of Cu(InGa)Se2films sputtered from quaternary targets | Zendy

Leng Zhang | Zendy; Yongyi Yu | Zendy; Jing Yu | Zendy; Yaowei Wei | Zendy

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Effects of annealing atmosphere on the performance of Cu(InGa)Se₂films sputtered from quaternary targets

Author(s) -

Leng Zhang,

Yongyi Yu,

Jing Yu,

Yaowei Wei

Publication year - 2020

Publication title -

royal society open science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.84

H-Index - 51

ISSN - 2054-5703

DOI - 10.1098/rsos.200662

Subject(s) - copper indium gallium selenide solar cells , materials science , annealing (glass) , sputtering , photovoltaics , thin film , optoelectronics , atmosphere (unit) , recombination , forming gas , nanotechnology , metallurgy , photovoltaic system , chemistry , electrical engineering , physics , biochemistry , engineering , gene , thermodynamics

Quaternary sputtering without additional selenization is a low-cost alternative method for the preparation of Cu(InGa)Se 2 (CIGS) thin film for photovoltaics. However, without selenization, the device efficiency is much lower than that with selenization. To comprehensively examine this problem, we compared the morphologies, depth profiles, compositions, electrical properties and recombination mechanism of the absorbers fabricated with and without additional selenization. The results revealed that the amount of surface Se on CIGS films annealed in a Se-free atmosphere is less than that on CIGS films annealed in a Se-containing atmosphere. Additionally, the lower amount of surface Se reduced the carrier concentration, enhanced the resistivity of the CIGS film and allowed CIGS/CdS interface recombination to be the dominant recombination mechanism of CIGS device. The increase of interface recombination reduced the efficiency of the device annealed in a Se-free atmosphere.

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