Ronald Charles Newman FInstP. 10 December 1931 — 30 July 2014 | Zendy

B.A. Joyce | Zendy

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Ronald Charles Newman FInstP. 10 December 1931 — 30 July 2014

Author(s) -

B.A. Joyce

Publication year - 2015

Publication title -

biographical memoirs of fellows of the royal society

Language(s) - English

Resource type - Journals

eISSN - 1748-8494

pISSN - 0080-4606

DOI - 10.1098/rsbm.2016.0004

Subject(s) - gallium arsenide , silicon , epitaxy , dopant , diffusion , semiconductor , impurity , fabrication , engineering physics , materials science , optoelectronics , doping , nanotechnology , physics , medicine , quantum mechanics , alternative medicine , layer (electronics) , pathology

Ronald Charles (Ron) Newman was one of the most versatile semiconductor physicists of his generation and is distinguished for his work in several different areas, most notably epitaxial growth and the behaviour of impurities and dopants in a range of device-related materials, mainly silicon and gallium arsenide. His most significant contributions came from the application of local vibrational-mode spectroscopy to studies of the segregation and diffusion of oxygen and hydrogen in silicon. The results were of fundamental importance in the fabrication of integrated circuits.

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