The effect of the warping term on the fractional quantum Hall states in topological insulators
Author(s) -
ZhenGuo Fu,
Fawei Zheng,
Zhigang Wang,
Ping Zhang
Publication year - 2013
Publication title -
progress of theoretical and experimental physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.887
H-Index - 53
ISSN - 2050-3911
DOI - 10.1093/ptep/ptt075
Subject(s) - image warping , physics , quantum hall effect , fractional quantum hall effect , symmetry (geometry) , condensed matter physics , topology (electrical circuits) , wave function , surface states , quantum mechanics , state (computer science) , topological insulator , quantum spin hall effect , surface (topology) , geometry , electron , electrical engineering , mathematics , algorithm , artificial intelligence , computer science , engineering
The warping effect on the fractional quantum Hall (FQH) states in topological insulators is studied theoretically. Based on the perturbed wavefunctions, which include contributions from the warping term, analytical expressions for Haldane's pseudopotentials are obtained. We show that the warping term does not break the symmetry of the pseudopotentials for $n$=$\pm1$ Landau levels (LLs). With increasing the warping strength of the Fermi surface, our results indicate that the stability of the FQH states for LL $n=0$ (LLs $n$=$\pm1$) becomes stronger (weaker), and the excitation gap at $\nu=1/3$ FQH state for LL $n$=0 also increases while the gaps for LLs $n$=$\pm1$ are unchanged.
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