Open Access3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2etching in plasma
Author(s) -
Branislav Radjenović,
M. Radmilović-Radjenović
Publication year - 2007
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/86/1/012017
Subject(s) - etching (microfabrication) , plasma etching , laplace transform , plasma , reactive ion etching , monte carlo method , isotropic etching , materials science , electron , ion , computational physics , chemistry , nanotechnology , physics , layer (electronics) , mathematics , mathematical analysis , statistics , organic chemistry , quantum mechanics