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MC simulation of ultrafast transistor using ballistic electron in intrinsic semiconductor and its fabrication feasibility
Author(s) -
Kazuhito Furuya,
Nobuya Machida,
Mitsuhiko Igarashi,
Ryo Nakagawa,
Issei Kashima,
M. Ishida,
Yasuyuki Miyamoto
Publication year - 2006
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/38/1/050
Subject(s) - transistor , fabrication , semiconductor , ultrashort pulse , optoelectronics , electron , materials science , nanotechnology , physics , electrical engineering , engineering , quantum mechanics , voltage , medicine , laser , alternative medicine , pathology

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