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Sensitivity enhancement of polysilicon piezo-resistive pressure sensors with phosphorous diffused resistors
Author(s) -
Kousik Sivakumar,
Nandita DasGupta,
K. N. Bhat,
K. Natarajan
Publication year - 2006
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/34/1/036
Subject(s) - wheatstone bridge , materials science , resistor , polycrystalline silicon , optoelectronics , resistive touchscreen , silicon , temperature coefficient , silicon on insulator , doping , boron , polysilicon depletion effect , electrical engineering , voltage , composite material , gate oxide , layer (electronics) , transistor , chemistry , engineering , organic chemistry , thin film transistor

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