Open AccessApplication of lattice strain analysis of semiconductor device by nano-beam diffraction using the 300 kV Cold-FE TEM
Author(s) -
Taketomo Sato,
H. Matsumoto,
K. Nakano,
Mitsuru Konno,
Munetoshi Fukui,
Isao Nagaoki,
Yoshio Taniguchi
Publication year - 2010
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/241/1/012014
Subject(s) - materials science , diffraction , lattice constant , semiconductor , focused ion beam , lattice (music) , scattering , mean free path , electron diffraction , ion beam , optics , beam (structure) , ion , optoelectronics , chemistry , physics , acoustics , organic chemistry