Open AccessA design of L-band second harmonic power amplifier
Author(s) -
Chao Guo,
Fei Yang
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1865/2/022074
Subject(s) - rf power amplifier , amplifier , power added efficiency , linear amplifier , direct coupled amplifier , electrical engineering , electronic engineering , power bandwidth , transistor , harmonic , computer science , engineering , physics , operational amplifier , acoustics , voltage , cmos
In the recent years of rapid development of communication technology, the transmission power and efficiency of RF signals are required for much higher level. As a key part of the transmitter, the performance of the power amplifier is considered a crucial part of the overall performance of the system. Compared with the traditional power amplifier, better performance can be achieved by the second harmonic power amplifier in the large signal state, and higher efficiency can also be obtained. A design of an L-band second harmonic power amplifier is proposed in the article. CREE’s gallium nitride transistor is selected for simulation through ADS software, and a drain efficiency of more than 70% can be achieved in the final test.