CZTSe solar cells prepared by co-evaporation of multilayer Cu–Sn/Cu,Zn,Sn,Se/ZnSe/Cu,Zn,Sn,Se stacks
Author(s) -
Lwitiko P. Mwakyusa,
Markus Neuwirth,
Willi Kogler,
Thomas Schnabel,
Erik Ahlswede,
Ulrich W. Paetzold,
Bryce S. Richards,
M. Hetterich
Publication year - 2019
Publication title -
physica scripta
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.415
H-Index - 83
eISSN - 1402-4896
pISSN - 0031-8949
DOI - 10.1088/1402-4896/ab2b16
Subject(s) - materials science , kesterite , annealing (glass) , schottky diode , schottky barrier , layer (electronics) , stack (abstract data type) , optoelectronics , thin film , open circuit voltage , solar cell , energy conversion efficiency , copper , chemical engineering , analytical chemistry (journal) , czts , voltage , metallurgy , nanotechnology , diode , chemistry , electrical engineering , chromatography , computer science , engineering , programming language
In this work, thin-film kesterite Cu2ZnSnSe4 (CZTSe) solar cells were prepared using a novel precursor configuration employing co-evaporated layer stacks of Mo/Cu–Sn/Cu,Zn,Sn,Se/ ZnSe/Cu,Zn,Sn,Se. It is found that this sequential deposition of the constituants leads to the formation of large CZTSe grains on the surface and fine grains at the Mo interface of the absorber, respectively. Prototype CZTSe solar cells using this stacked approach achieve power conversion efficiencies of up to 7.9% at an open-circuit voltage of 430 mV and a fill-factor of 62%. The analysis of temperature-dependent current density–voltage characteristics indicates that bulk Schottky–Read–Hall recombination is the dominant recombination mechanism for the devices fabricated from the proposed stack. In addition, the influence of pre-annealing of each stacked layer on the absorber growth and device performance is examined and discussed. Supplementary material for this article is available online
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