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Electronic, optical, and thermoelectric properties of Janus In-based monochalcogenides
Author(s) -
Tuan V. Vu,
Vo T T Vi,
Huynh V. Phuc,
Chuong V. Nguyen,
N. A. Poklonski,
C.A. Duque,
P. Raics,
Bui D. Hoi,
Nguyen N. Hieu
Publication year - 2021
Publication title -
journal of physics condensed matter
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 228
eISSN - 1361-648X
pISSN - 0953-8984
DOI - 10.1088/1361-648x/abf381
Subject(s) - janus , monolayer , materials science , condensed matter physics , thermoelectric effect , electric field , semiconductor , electronic structure , figure of merit , optoelectronics , nanotechnology , physics , thermodynamics , quantum mechanics
Inspired by the successfully experimental synthesis of Janus structures recently, we systematically study the electronic, optical, and electronic transport properties of Janus monolayers In 2 XY ( X / Y = S, Se, Te with X ≠ Y ) in the presence of a biaxial strain and electric field using density functional theory. Monolayers In 2 XY are dynamically and thermally stable at room temperature. At equilibrium, both In 2 STe and In 2 SeTe are direct semiconductors while In 2 SSe exhibits an indirect semiconducting behavior. The strain significantly alters the electronic structure of In 2 XY and their photocatalytic activity. Besides, the indirect-direct gap transitions can be found due to applied strain. The effect of the electric field on optical properties of In 2 XY is negligible. Meanwhile, the optical absorbance intensity of the Janus In 2 XY monolayers is remarkably increased by compressive strain. Also, In 2 XY monolayers exhibit very low lattice thermal conductivities resulting in a high figure of meri ZT , which makes them potential candidates for room-temperature thermoelectric materials.

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