Open AccessA thermally erasable silicon oxide layer for molecular beam epitaxy
Author(s) -
Yaonan Hou,
Hui Jia,
Mingchu Tang,
Aleksander Buseth Mosberg,
Quentin M. Ramasse,
Ilias Skandalos,
Yasir Noori,
Junjie Yang,
Huiyun Liu,
A.J. Seeds,
Frédéric Gardès
Publication year - 2022
Publication title -
journal of physics. d, applied physics
Language(s) - English
Resource type - Journals
eISSN - 1361-6463
pISSN - 0022-3727
DOI - 10.1088/1361-6463/ac8600
Subject(s) - molecular beam epitaxy , materials science , silicon , epitaxy , layer (electronics) , wafer , oxide , optoelectronics , silicon oxide , nanotechnology , metallurgy , silicon nitride