Open AccessIntrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing
Author(s) -
Takuma Kobayashi,
Maximilian Rühl,
Johannes A. F. Lehmeyer,
Leonard K S Zimmermann,
Michael Krieger,
Heiko B. Weber
Publication year - 2021
Publication title -
journal of physics. d, applied physics
Language(s) - English
Resource type - Journals
eISSN - 1361-6463
pISSN - 0022-3727
DOI - 10.1088/1361-6463/ac3a49
Subject(s) - annealing (glass) , photoluminescence , materials science , ion implantation , vacancy defect , silicon carbide , luminescence , germanium , silicon , tin , ion , doping , analytical chemistry (journal) , optoelectronics , crystallography , chemistry , metallurgy , organic chemistry , chromatography
We study the generation and transformation of intrinsic luminescent centers in 4H-polytype of silicon carbide via heavy ion implantation and subsequent annealing. Defects induced by the implantation of germanium (Ge) or tin (Sn) have been characterized by photoluminescence (PL) spectra recorded at cryogenic temperatures. We find three predominant but as-yet-unidentified PL signatures (labeled as DI 1–3 ) at the wavelength of 1002.8 nm (DI 1 ), 1004.7 nm (DI 2 ), and 1006.1 nm (DI 3 ) after high dose implantation (> 4 × 10 13 cm −2 ) and high temperature annealing (> 1700°C). The fact that the DI lines co-occur and are energetically close together suggest that they originate from the same defect. Regardless of the implanted ion (Ge or Sn), a sharp increase in their PL intensity is observed when the implantation damage becomes high (vacancy concentration > 10 22 cm −3 ), indicating that the lines stem from an intrinsic defect caused by the damage. By tracking the PL signals after stepwise annealing, we examine how the overall intrinsic defects behave in the temperature range of 500 – 1800°C; the silicon vacancies formed by the implantation transform into either divacancies or antisite-vacancy pairs with annealing at about 1000°C. These spectral signatures are strongly reduced at 1200°C where the so-called TS defects are maximized in luminescence. As a final stage, the DI defects, which are most likely formed of antisites and vacancies, emerge at 1700°C. Our results provide a knowledge on how to incorporate and manipulate the intrinsic luminescent centers in SiC with ion implantation and annealing, paving the way for fully integrated quantum technology employing SiC.