Open AccessDual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects
Author(s) -
Joseph Pinchbeck,
Kean Boon Lee,
Sheng Jiang,
P.A. Houston
Publication year - 2020
Publication title -
journal of physics. d, applied physics
Language(s) - English
Resource type - Journals
eISSN - 1361-6463
pISSN - 0022-3727
DOI - 10.1088/1361-6463/abcb34
Subject(s) - transconductance , materials science , optoelectronics , transistor , electron mobility , metal , field effect transistor , high electron mobility transistor , electric field , induced high electron mobility transistor , electrical engineering , voltage , physics , quantum mechanics , metallurgy , engineering
AlGaN/GaN high electron mobility transistors with a range of dual metal gate (DMG) lengths have been fabricated and studied. An improvement in transconductance up to 9% has been measured in the DMG devices in comparison to the conventional single metal gate devices. This is attributed to the distribution of the electric field under the gate region as a result of two gate metals. The drain induced barrier lowering is also suppressed using the sub- µ m DMG devices, with a drain induced barrier lowering decrease of around 50% due to a potential shielding effect in the two-dimensional electron gas channel.