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Interfacial electronic effects in functional biolayers integrated into organic field-effect transistors
Author(s) -
M. Daniela Angione,
Serafina Cotrone,
Maria Magliulo,
Antonia Mallardi,
Davide Altamura,
Cinzia Giannini,
Nicola Cioffi,
Luigia Sabbatini,
Emiliano Fratini,
Piero Baglioni,
Gaetano Scamarcio,
Gerardo Palazzo,
Luisa Torsi
Publication year - 2012
Publication title -
proceedings of the national academy of sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.011
H-Index - 771
eISSN - 1091-6490
pISSN - 0027-8424
DOI - 10.1073/pnas.1200549109
Subject(s) - organic field effect transistor , field effect transistor , materials science , transistor , lipid bilayer , nanotechnology , organic semiconductor , biosensor , membrane , optoelectronics , chemistry , electrical engineering , biochemistry , voltage , engineering
Biosystems integration into an organic field-effect transistor (OFET) structure is achieved by spin coating phospholipid or protein layers between the gate dielectric and the organic semiconductor. An architecture directly interfacing supported biological layers to the OFET channel is proposed and, strikingly, both the electronic properties and the biointerlayer functionality are fully retained. The platform bench tests involved OFETs integrating phospholipids and bacteriorhodopsin exposed to 1-5% anesthetic doses that reveal drug-induced changes in the lipid membrane. This result challenges the current anesthetic action model relying on the so far provided evidence that doses much higher than clinically relevant ones (2.4%) do not alter lipid bilayers' structure significantly. Furthermore, a streptavidin embedding OFET shows label-free biotin electronic detection at 10 parts-per-trillion concentration level, reaching state-of-the-art fluorescent assay performances. These examples show how the proposed bioelectronic platform, besides resulting in extremely performing biosensors, can open insights into biologically relevant phenomena involving membrane weak interfacial modifications.

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