Open AccessHigh electron mobility in AlN:Si by point and extended defect management
Author(s) -
Pegah Bagheri,
Cristyan Quiñones-García,
Dolar Khachariya,
Shashwat Rathkanthiwar,
Pramod Reddy,
Ronny Kirste,
Seiji Mita,
James Tweedie,
Ramón Collazo,
Zlatko Sitar
Publication year - 2022
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0124589
Subject(s) - materials science , doping , dopant , sapphire , electron mobility , dislocation , wafer , crystallographic defect , optoelectronics , condensed matter physics , composite material , optics , laser , physics