Open AccessErratum: “Electron and hole mobilities of GaN with bulk, quantum well and HEMT structures” [J. Appl. Phys. 130, 125701 (2021)]
Author(s) -
Chihiro Hamaguchi
Publication year - 2022
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0122996
Subject(s) - high electron mobility transistor , mobilities , condensed matter physics , materials science , electron , optoelectronics , physics , quantum mechanics , transistor , sociology , social science , voltage
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