Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility | Zendy

Joseph Spencer | Zendy; Marko J. Tadjer | Zendy; Alan G. Jacobs | Zendy; Michael A. Mastro | Zendy; John L. Lyons | Zendy; Jaime A. Freitas | Zendy; James C. Gallagher | Zendy; Quang Tu Thieu | Zendy; Kohei Sasaki | Zendy; Akito Kuramata | Zendy; Yuhao Zhang | Zendy; Travis J. Anderson | Zendy; Karl D. Hobart | Zendy

Open Access

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Author(s) -

Joseph Spencer,

Marko J. Tadjer,

Alan G. Jacobs,

Michael A. Mastro,

John L. Lyons,

Jaime A. Freitas,

James C. Gallagher,

Quang Tu Thieu,

Kohei Sasaki,

Akito Kuramata,

Yuhao Zhang,

Travis J. Anderson,

Karl D. Hobart

Publication year - 2022

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/5.0120494

Subject(s) - analytical chemistry (journal) , ohmic contact , hall effect , epitaxy , doping , sheet resistance , materials science , secondary ion mass spectrometry , ion implantation , impurity , dopant activation , electrical resistivity and conductivity , electron mobility , dopant , spreading resistance profiling , chemistry , ion , optoelectronics , nanotechnology , engineering , organic chemistry , chromatography , layer (electronics) , electrical engineering

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