Open AccessAqueous-solution-synthesized gallium oxide dielectrics for high-mobility thin-film transistors enhanced by phosphorus incorporation
Author(s) -
Wangying Xu,
Tao Peng,
Lin Chen,
Weicheng Huang,
Shuangmu Zhuo,
Qiubao Lin,
Chun Zhao,
Fang Xu,
Yu Zhang,
Deliang Zhu
Publication year - 2022
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0118814
Subject(s) - materials science , dielectric , thin film transistor , gallium , optoelectronics , gate dielectric , aqueous solution , oxide , band gap , electron mobility , transistor , chemical engineering , nanotechnology , chemistry , electrical engineering , metallurgy , layer (electronics) , organic chemistry , engineering , voltage
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