Open AccessImpact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes
Author(s) -
Yi Chao Chow,
Cheyenne Lynsky,
Shuji Nakamura,
Steven P. DenBaars,
Claude Weisbuch,
James S. Speck
Publication year - 2022
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0117318
Subject(s) - light emitting diode , indium , optoelectronics , quantum well , quantum confined stark effect , materials science , spontaneous emission , electric field , quantum efficiency , indium gallium nitride , doping , diode , wide bandgap semiconductor , carrier lifetime , carrier generation and recombination , stark effect , semiconductor , optics , physics , silicon , laser , quantum mechanics
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