Open AccessLow-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes
Author(s) -
Keisuke Ide,
Naoto Watanabe,
Takayoshi Katase,
Masato Sasase,
Junghwan Kim,
Shigenori Ueda,
Koji Horiba,
Hiroshi Kumigashira,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya
Publication year - 2022
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0115384
Subject(s) - materials science , optoelectronics , light emitting diode , dopant , phosphor , amorphous solid , doping , luminescence , diode , electroluminescence , oxide , x ray photoelectron spectroscopy , wide bandgap semiconductor , semiconductor , nanotechnology , chemical engineering , metallurgy , chemistry , layer (electronics) , crystallography , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom