z-logo
open-access-imgOpen Access
Demonstration of MOCVD-grown BGaN with over 10% boron composition
Author(s) -
Feras AlQatari,
CheHao Liao,
Xiaohang Li
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0113666
Subject(s) - chemical vapor deposition , wurtzite crystal structure , boron , analytical chemistry (journal) , metalorganic vapour phase epitaxy , materials science , rutherford backscattering spectrometry , band gap , chemistry , thin film , epitaxy , nanotechnology , optoelectronics , zinc , metallurgy , organic chemistry , chromatography , layer (electronics)

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom