Open AccessEffect of dopant redistribution in gate electrode on surface plasmon resonance in InGaZnO thin-film transistors
Author(s) -
Hui Su,
Wing Man Tang,
P. T. Lai
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0111597
Subject(s) - materials science , gate dielectric , dopant , optoelectronics , electron mobility , electrode , thin film transistor , surface plasmon resonance , dielectric , doping , surface plasmon , analytical chemistry (journal) , transistor , plasmon , nanotechnology , chemistry , electrical engineering , layer (electronics) , voltage , chromatography , nanoparticle , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom