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Plasma instability in graphene field-effect transistors with a shifted gate
Author(s) -
Justin Crabb,
Xavier Cantos-Roman,
Josep Miquel Jornet,
G. R. Aǐzin
Publication year - 2022
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0111560
Subject(s) - transistor , field effect transistor , graphene , instability , physics , asymmetry , plasma , terahertz radiation , optoelectronics , logic gate , condensed matter physics , electrical engineering , quantum mechanics , voltage , engineering

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