Open AccessImproved anti-ferroelectric properties enabled by high pressure annealing for eDRAM applications
Author(s) -
Qin Wang,
Shihao Yu,
Yang Peng,
Yefan Zhang,
Haijun Liu,
Hui Xu,
Sen Liu,
Qingjiang Li
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0107292
Subject(s) - materials science , tin , capacitor , annealing (glass) , optoelectronics , ferroelectricity , non volatile memory , electrode , random access memory , voltage , electronic engineering , electrical engineering , computer science , dielectric , composite material , metallurgy , computer hardware , chemistry , engineering
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