Open AccessThe melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si
Author(s) -
Zhenzhuo Zhang,
Jing Yang,
Degang Zhao,
Baibin Wang,
Y. H. Zhang,
Feng Liang,
Ping Chen,
Zongshun Liu,
Yuhao Ben
Publication year - 2022
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0105524
Subject(s) - etching (microfabrication) , materials science , layer (electronics) , gallium , optoelectronics , substrate (aquarium) , silicon , gallium nitride , process (computing) , metallurgy , composite material , computer science , oceanography , geology , operating system
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