Open AccessDirect measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy
Author(s) -
Nemanja Peric,
Corentin Durand,
Maxime Berthe,
Yan Lu,
Kekeli N’Konou,
B. Grandidier,
R. Coratger,
I. Lefebvre,
Ph. Ebert,
Louis Biadala,
L. Desplanque,
X. Wallart
Publication year - 2022
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0104807
Subject(s) - heterojunction , nanowire , optoelectronics , materials science , scanning tunneling microscope , quantum tunnelling , semiconductor , gallium arsenide , scanning tunneling spectroscopy , epitaxy , substrate (aquarium) , nanotechnology , oceanography , layer (electronics) , geology
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