Open AccessIn situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1−x)2O3 thin films
Author(s) -
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
HsienLien Huang,
Jinwoo Hwang,
Hongping Zhao
Publication year - 2022
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0104433
Subject(s) - metalorganic vapour phase epitaxy , amorphous solid , x ray photoelectron spectroscopy , chemical vapor deposition , dielectric , materials science , thin film , band gap , analytical chemistry (journal) , optoelectronics , crystallography , layer (electronics) , chemistry , nanotechnology , chemical engineering , epitaxy , chromatography , engineering
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