Open Access β -Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy
Author(s) -
Ashok Dheenan,
Joe F. McGlone,
Nidhin Kurian Kalarickal,
HsienLien Huang,
Mark Brenner,
Jinwoo Hwang,
Hemant Ghadi,
Siddharth Rajan
Publication year - 2022
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0103978
Subject(s) - molecular beam epitaxy , dopant , doping , materials science , optoelectronics , substrate (aquarium) , epitaxy , leakage (economics) , analytical chemistry (journal) , nanotechnology , chemistry , layer (electronics) , oceanography , chromatography , geology , economics , macroeconomics