Open AccessComment on “The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT” [Appl. Phys. Lett. 120, 172107 (2022)]
Author(s) -
K. Thonke
Publication year - 2022
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0102597
Subject(s) - high electron mobility transistor , origination , gaussian , identification (biology) , optoelectronics , materials science , physics , condensed matter physics , computer science , biology , transistor , quantum mechanics , telecommunications , voltage , botany
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